Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 1013/cm2; this value cannot be obtained using conventional QD fabrication technique...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-02, Vol.208 (2), p.425-428
Hauptverfasser: Akahane, Kouichi, Yamamoto, Naokatsu, Kawanishi, Tetsuya
Format: Artikel
Sprache:eng
Schlagworte:
molecular beam epitaxy
quantum dot
self-assembly
strain compensation
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Zusammenfassung:Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 1013/cm2; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 µm photoluminescence (PL) emission at room temperature.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201000432