Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell
InGaN/GaN‐based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3‐inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimized for the purpose of improving the GaN growth rate...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2010-06, Vol.207 (6), p.1386-1388 |
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| container_issue | 6 |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 207 |
| creator | Iso, Kenji Takaki, Ryohei Ishihama, Yoshiyasu Inagawa, Tomokazu Takahashi, Yuzuru |
| description | InGaN/GaN‐based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3‐inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimized for the purpose of improving the GaN growth rate and its in‐plane distribution. The growth rate and the layer uniformity of GaN were improved when the reactor cell was narrowed down and tapered. The on‐wafer deviation of the electroluminescence (EL) peak wavelength and power were 5 nm and within 4%, respectively, except at the edge. The full width at half maximum (FWHM) of EL spectrum for an LED grown at atmospheric pressure was consistently smaller than that of one grown at reduced pressure over the entire wavelength range. |
| doi_str_mv | 10.1002/pssa.200983434 |
| format | Article |
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The reactor configuration was optimized for the purpose of improving the GaN growth rate and its in‐plane distribution. The growth rate and the layer uniformity of GaN were improved when the reactor cell was narrowed down and tapered. The on‐wafer deviation of the electroluminescence (EL) peak wavelength and power were 5 nm and within 4%, respectively, except at the edge. The full width at half maximum (FWHM) of EL spectrum for an LED grown at atmospheric pressure was consistently smaller than that of one grown at reduced pressure over the entire wavelength range.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.200983434</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Applied sciences ; design ; electroluminescence ; Electronics ; Exact sciences and technology ; growth ; InGaN/GaN ; LEDs ; MOCVD ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. 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The full width at half maximum (FWHM) of EL spectrum for an LED grown at atmospheric pressure was consistently smaller than that of one grown at reduced pressure over the entire wavelength range.</description><subject>Applied sciences</subject><subject>design</subject><subject>electroluminescence</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>growth</subject><subject>InGaN/GaN</subject><subject>LEDs</subject><subject>MOCVD</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iso, Kenji</creatorcontrib><creatorcontrib>Takaki, Ryohei</creatorcontrib><creatorcontrib>Ishihama, Yoshiyasu</creatorcontrib><creatorcontrib>Inagawa, Tomokazu</creatorcontrib><creatorcontrib>Takahashi, Yuzuru</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Iso, Kenji</au><au>Takaki, Ryohei</au><au>Ishihama, Yoshiyasu</au><au>Inagawa, Tomokazu</au><au>Takahashi, Yuzuru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>2010-06</date><risdate>2010</risdate><volume>207</volume><issue>6</issue><spage>1386</spage><epage>1388</epage><pages>1386-1388</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>InGaN/GaN‐based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3‐inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimized for the purpose of improving the GaN growth rate and its in‐plane distribution. The growth rate and the layer uniformity of GaN were improved when the reactor cell was narrowed down and tapered. The on‐wafer deviation of the electroluminescence (EL) peak wavelength and power were 5 nm and within 4%, respectively, except at the edge. The full width at half maximum (FWHM) of EL spectrum for an LED grown at atmospheric pressure was consistently smaller than that of one grown at reduced pressure over the entire wavelength range.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.200983434</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1862-6300 |
| ispartof | Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1386-1388 |
| issn | 1862-6300 1862-6319 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssa_200983434 |
| source | Wiley Online Library All Journals |
| subjects | Applied sciences design electroluminescence Electronics Exact sciences and technology growth InGaN/GaN LEDs MOCVD Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell |
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