Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell

InGaN/GaN‐based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3‐inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimized for the purpose of improving the GaN growth rate and its in‐plane distribution. The growth rate and the layer uniformity of GaN were improved when the reactor cell was narrowed down and tapered. The on‐wafer deviation of the electroluminescence (EL) peak wavelength and power were 5 nm and within 4%, respectively, except at the edge. The full width at half maximum (FWHM) of EL spectrum for an LED grown at atmospheric pressure was consistently smaller than that of one grown at reduced pressure over the entire wavelength range.