Hopping transport at localized band tail states in amorphous hydrogenated silicon

The transient current of the time‐of‐flight (TOF) in amorphous hydrogenated silicon calculated from the hopping at localized band tail states with the Monte Carlo simulation is shown to agree with that of the experiment in the line shape and the transit time. The attempt‐to‐escape frequencies obtained by fitting the electric field dependence of the transit time in the simulation with the Pfister–Ohno equation for the transit time derived from the hopping model, have been far beyond the phonon frequencies as in the case of the experiment. The attempt‐to‐escape frequency has been empirically described with the Meyer–Neldel (MN) rule as well as in the experiment. The MN rule for the attempt‐to‐escape frequency in the TOF has been concluded to originate in the hopping controlled by the deep localized band tail states from the simulation.