Minority carrier injection limited current in Re/4H-SiC Schottky diodes

Current–voltage–temperature, capacitance–voltage, and Fourier transform‐deep level transient spectroscopy (FT‐DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n‐silicon carbide (SiC) Schottky diodes. A power law dependence of current on voltage has been observed in the Re/4H‐SiC Schottky diodes at large forward bias. DLTS studies of the diodes reveal the presence of a deep trap at an energy $E_{\rm c} - E_{\rm t} = 0.6\,{\rm eV}$. The electron trap center is tentatively associated with the prominent Z1 defect level, and the obtained trap density and capture cross‐section values correlate well with available literature values. Excess capacitance has been observed under forward bias suggesting that minority carrier injection is the mechanism responsible for the observed characteristics.