Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

A self‐consistent electrical‐thermal‐optical‐gain modeling of threshold characteristics of an InP‐based 1300 nm AlInGaAs photonic‐crystal vertical‐cavity surface‐emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse‐mode discrimination can be simulta...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2009-07, Vol.206 (7), p.1396-1403
Hauptverfasser:	Czyszanowski, Tomasz, Sarzała, Robert P., Dems, Maciej, Thienpont, Hugo, Nakwaski, Włodzimierz, Panajotov, Krassimir
Format:	Artikel
Sprache:	eng
Schlagworte:	42.55.Px 42.55.Tv 81.05.Ea 85.35.Be 85.60.Bt Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optical materials Optics Photonic bandgap materials Physics Semiconductor lasers laser diodes
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Zusammenfassung:	A self‐consistent electrical‐thermal‐optical‐gain modeling of threshold characteristics of an InP‐based 1300 nm AlInGaAs photonic‐crystal vertical‐cavity surface‐emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse‐mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.200824499