Charge selective contact on ultra‐thin In(OH) x S y /Pb(OH) x S y heterostructure prepared by SILAR

Ultra‐thin In(OH) x S y /Pb(OH) x S y heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy‐sulphides. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)