Subthreshold irradiation effects in silicon epitaxial films

Irradiation‐induced changes in the electrical resistance (ΔR/Ro) of silicon epitaxial films subjected to bombardment with electrons of energies up to 100 keV were studied. The investigated effects (dose, energy, and other dependences) on epitaxial layers of various thickness give new information on...

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Veröffentlicht in:	Phys. Status Solidi (a) 3: 99-104(16 Sep 1970) 1970-09, Vol.3 (1), p.99-104
Hauptverfasser:	Zaikovskaya, M. A., Kiv, A. E., Niyazova, O. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	DEFECTS ELECTRIC CONDUCTIVITY ELECTRON BEAMS ELECTRONS/ effects on silicon epitaxial films at 6 to 100 keV EPITAXY KEV RANGE 10-100 N33110 -Physics (Solid State)-Radiation Effects RADIATION EFFECTS SILICON SILICON/radioinduced defects in epitaxial films of, energy dependence of subthreshold effect in 6- to 100-keV electron THICKNESS THRESHOLD ENERGY
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