Subthreshold irradiation effects in silicon epitaxial films
Irradiation‐induced changes in the electrical resistance (ΔR/Ro) of silicon epitaxial films subjected to bombardment with electrons of energies up to 100 keV were studied. The investigated effects (dose, energy, and other dependences) on epitaxial layers of various thickness give new information on...
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| Veröffentlicht in: | Phys. Status Solidi (a) 3: 99-104(16 Sep 1970) 1970-09, Vol.3 (1), p.99-104 |
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| container_title | Phys. Status Solidi (a) 3: 99-104(16 Sep 1970) |
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| creator | Zaikovskaya, M. A. Kiv, A. E. Niyazova, O. R. |
| description | Irradiation‐induced changes in the electrical resistance (ΔR/Ro) of silicon epitaxial films subjected to bombardment with electrons of energies up to 100 keV were studied. The investigated effects (dose, energy, and other dependences) on epitaxial layers of various thickness give new information on the subthreshold mechanism of damage production and the passage of low‐energy electrons through semiconductors.
Strahlungsbedingte Veränderungen des elektrischen Widerstandes ΔR/Ro von Silizium‐Epitaxieschichten, die mit Elektronen mit Energien bis zu 100 keV beschossen wurden, werden untersucht. Die an Epitaxieschichten unterschiedlicher Dicke untersuchten Effekte (Dosis‐, Energie‐ und andere Abhängigkeiten) geben neue Informationen über den unterschwelligen Mechanismus der Defekterzeugung und den Durchgang niederenergetischer Elektronen durch Halbleiter. |
| doi_str_mv | 10.1002/pssa.19700030112 |
| format | Article |
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Strahlungsbedingte Veränderungen des elektrischen Widerstandes ΔR/Ro von Silizium‐Epitaxieschichten, die mit Elektronen mit Energien bis zu 100 keV beschossen wurden, werden untersucht. Die an Epitaxieschichten unterschiedlicher Dicke untersuchten Effekte (Dosis‐, Energie‐ und andere Abhängigkeiten) geben neue Informationen über den unterschwelligen Mechanismus der Defekterzeugung und den Durchgang niederenergetischer Elektronen durch Halbleiter.</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.19700030112</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>DEFECTS ; ELECTRIC CONDUCTIVITY ; ELECTRON BEAMS ; ELECTRONS/ effects on silicon epitaxial films at 6 to 100 keV ; EPITAXY ; KEV RANGE 10-100 ; N33110 -Physics (Solid State)-Radiation Effects ; RADIATION EFFECTS ; SILICON ; SILICON/radioinduced defects in epitaxial films of, energy dependence of subthreshold effect in 6- to 100-keV electron ; THICKNESS ; THRESHOLD ENERGY</subject><ispartof>Phys. Status Solidi (a) 3: 99-104(16 Sep 1970), 1970-09, Vol.3 (1), p.99-104</ispartof><rights>Copyright © 1970 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4282-bba73ff17fab8212289d49f7f0ea8bae4418ed567186ddf59ac825045de83c693</citedby><cites>FETCH-LOGICAL-c4282-bba73ff17fab8212289d49f7f0ea8bae4418ed567186ddf59ac825045de83c693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.19700030112$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.19700030112$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,885,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/4107121$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zaikovskaya, M. A.</creatorcontrib><creatorcontrib>Kiv, A. E.</creatorcontrib><creatorcontrib>Niyazova, O. R.</creatorcontrib><creatorcontrib>Inst. of Nuclear Physics, Tashkent</creatorcontrib><title>Subthreshold irradiation effects in silicon epitaxial films</title><title>Phys. Status Solidi (a) 3: 99-104(16 Sep 1970)</title><addtitle>phys. stat. sol. (a)</addtitle><description>Irradiation‐induced changes in the electrical resistance (ΔR/Ro) of silicon epitaxial films subjected to bombardment with electrons of energies up to 100 keV were studied. The investigated effects (dose, energy, and other dependences) on epitaxial layers of various thickness give new information on the subthreshold mechanism of damage production and the passage of low‐energy electrons through semiconductors.
Strahlungsbedingte Veränderungen des elektrischen Widerstandes ΔR/Ro von Silizium‐Epitaxieschichten, die mit Elektronen mit Energien bis zu 100 keV beschossen wurden, werden untersucht. Die an Epitaxieschichten unterschiedlicher Dicke untersuchten Effekte (Dosis‐, Energie‐ und andere Abhängigkeiten) geben neue Informationen über den unterschwelligen Mechanismus der Defekterzeugung und den Durchgang niederenergetischer Elektronen durch Halbleiter.</description><subject>DEFECTS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRON BEAMS</subject><subject>ELECTRONS/ effects on silicon epitaxial films at 6 to 100 keV</subject><subject>EPITAXY</subject><subject>KEV RANGE 10-100</subject><subject>N33110 -Physics (Solid State)-Radiation Effects</subject><subject>RADIATION EFFECTS</subject><subject>SILICON</subject><subject>SILICON/radioinduced defects in epitaxial films of, energy dependence of subthreshold effect in 6- to 100-keV electron</subject><subject>THICKNESS</subject><subject>THRESHOLD ENERGY</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1970</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEUhYMoWKt7l4P7qfdmHskgLkrRKhYfVGlxEzJ50Oi0U5IR23_vlBHRlasLh--7HA4hpwgDBKDn6xDkAAsGAAkg0j3Sw4xinBT5fJ_02hRjXuTZITkK4a2lUmDQIxfTj7JZeBMWdaUj573UTjauXkXGWqOaELlVFFzl1C5au0ZunKwi66plOCYHVlbBnHzfPnm5vnoe3cSTh_HtaDiJVUo5jctSssRaZFaWnCKlvNBpYZkFI3kpTZoiNzrLGfJca5sVUnGaQZppwxOVF0mfnHV_69A4EZRrjFq0fVZtP5EiMKTYQtBBytcheGPF2rul9FuBIHYLid1C4tdCrXLZKZ-uMtt_efE4nQ7_-nHnu9CYzY8v_bvIWcIyMbsfC5w83c3mMxCvyRdvnXtP</recordid><startdate>19700916</startdate><enddate>19700916</enddate><creator>Zaikovskaya, M. A.</creator><creator>Kiv, A. E.</creator><creator>Niyazova, O. R.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19700916</creationdate><title>Subthreshold irradiation effects in silicon epitaxial films</title><author>Zaikovskaya, M. A. ; Kiv, A. E. ; Niyazova, O. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4282-bba73ff17fab8212289d49f7f0ea8bae4418ed567186ddf59ac825045de83c693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1970</creationdate><topic>DEFECTS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRON BEAMS</topic><topic>ELECTRONS/ effects on silicon epitaxial films at 6 to 100 keV</topic><topic>EPITAXY</topic><topic>KEV RANGE 10-100</topic><topic>N33110 -Physics (Solid State)-Radiation Effects</topic><topic>RADIATION EFFECTS</topic><topic>SILICON</topic><topic>SILICON/radioinduced defects in epitaxial films of, energy dependence of subthreshold effect in 6- to 100-keV electron</topic><topic>THICKNESS</topic><topic>THRESHOLD ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zaikovskaya, M. A.</creatorcontrib><creatorcontrib>Kiv, A. E.</creatorcontrib><creatorcontrib>Niyazova, O. R.</creatorcontrib><creatorcontrib>Inst. of Nuclear Physics, Tashkent</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Phys. Status Solidi (a) 3: 99-104(16 Sep 1970)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zaikovskaya, M. A.</au><au>Kiv, A. E.</au><au>Niyazova, O. R.</au><aucorp>Inst. of Nuclear Physics, Tashkent</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Subthreshold irradiation effects in silicon epitaxial films</atitle><jtitle>Phys. Status Solidi (a) 3: 99-104(16 Sep 1970)</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1970-09-16</date><risdate>1970</risdate><volume>3</volume><issue>1</issue><spage>99</spage><epage>104</epage><pages>99-104</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><abstract>Irradiation‐induced changes in the electrical resistance (ΔR/Ro) of silicon epitaxial films subjected to bombardment with electrons of energies up to 100 keV were studied. The investigated effects (dose, energy, and other dependences) on epitaxial layers of various thickness give new information on the subthreshold mechanism of damage production and the passage of low‐energy electrons through semiconductors.
Strahlungsbedingte Veränderungen des elektrischen Widerstandes ΔR/Ro von Silizium‐Epitaxieschichten, die mit Elektronen mit Energien bis zu 100 keV beschossen wurden, werden untersucht. Die an Epitaxieschichten unterschiedlicher Dicke untersuchten Effekte (Dosis‐, Energie‐ und andere Abhängigkeiten) geben neue Informationen über den unterschwelligen Mechanismus der Defekterzeugung und den Durchgang niederenergetischer Elektronen durch Halbleiter.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.19700030112</doi><tpages>6</tpages></addata></record> |
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| subjects | DEFECTS ELECTRIC CONDUCTIVITY ELECTRON BEAMS ELECTRONS/ effects on silicon epitaxial films at 6 to 100 keV EPITAXY KEV RANGE 10-100 N33110 -Physics (Solid State)-Radiation Effects RADIATION EFFECTS SILICON SILICON/radioinduced defects in epitaxial films of, energy dependence of subthreshold effect in 6- to 100-keV electron THICKNESS THRESHOLD ENERGY |
| title | Subthreshold irradiation effects in silicon epitaxial films |
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