Measurements on MIS structures at infrasonic frequencies

The capacitance and conductance of AlSiO2Si structures have been measured at frequencies as low as 0.03 Hz. Such measurements are an important supplement to generally accepted measurements at audio and high frequencies. It has been found that the frequency range from 1 to 0.1 Hz corresponds to equilibrium recharging of capacitances. From the equilibrium C–U curve and the high‐frequency C–U curve the distribution of impurities doped in Si near the SiSiO2 interface has been found. [Russian Text Ignored].