MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells
ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewh...
Gespeichert in:
Veröffentlicht in: | Progress in photovoltaics 2004-08, Vol.12 (5), p.333-338 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 338 |
---|---|
container_issue | 5 |
container_start_page | 333 |
container_title | Progress in photovoltaics |
container_volume | 12 |
creator | Siebentritt, Susanne Walk, Philipp Fiedeler, Ulrich Lauermann, Iver Rahne, Kari Lux-Steiner, Martha Ch Niesen, Thomas P. Karg, Franz |
description | ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd. |
doi_str_mv | 10.1002/pip.539 |
format | Article |
fullrecord | <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pip_539</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_S9WQPZ2C_X</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2429-c75165149ef47fc8970db97fcb3afd86e557ca259ca91a4ec37840f0b96a0aec3</originalsourceid><addsrcrecordid>eNp10FFPwjAUBeDFaCKi8S_0xQiRYbut7e6jmYokKBBUCC9N17VxOtjSQpR_78iMPvl0z02-nIfjeecE9wnGwXWVV30awoHXIhjAJxQWh_vMAp8D0GPvxLl3jAmPgbW86eM4eb1F0iGJMrtDma5Kl2_yco1WevNWZqg0aLmeaZRujdHWIVNalGw7w3VvILudWW-muwFyZSEtUroo3Kl3ZGTh9NnPbXsv93fPyYM_Gg-Gyc3IV0EUgK84JYySCLSJuFExcJylUKc0lCaLmaaUKxlQUBKIjLQKeRxhg1NgEsv6bXuXTa-ypXNWG1HZfCXtThAs9kuIeglRL1HLi0ZW0ilZGCvXKnd_nAIDzFjtrhr3mRd691-dmAwnTavf6Nxt9NevlvZDMB5yKuZPAzGD-XSyDBKxCL8BivZ5cQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Siebentritt, Susanne ; Walk, Philipp ; Fiedeler, Ulrich ; Lauermann, Iver ; Rahne, Kari ; Lux-Steiner, Martha Ch ; Niesen, Thomas P. ; Karg, Franz</creator><creatorcontrib>Siebentritt, Susanne ; Walk, Philipp ; Fiedeler, Ulrich ; Lauermann, Iver ; Rahne, Kari ; Lux-Steiner, Martha Ch ; Niesen, Thomas P. ; Karg, Franz</creatorcontrib><description>ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.</description><identifier>ISSN: 1062-7995</identifier><identifier>EISSN: 1099-159X</identifier><identifier>DOI: 10.1002/pip.539</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Applied sciences ; buffer ; chalcopyrite ; damp heat testing ; Energy ; Exact sciences and technology ; MOCVD ; Natural energy ; Photovoltaic conversion ; Solar cells. Photoelectrochemical cells ; Solar energy ; thin film solar cells ; ZnSe</subject><ispartof>Progress in photovoltaics, 2004-08, Vol.12 (5), p.333-338</ispartof><rights>Copyright © 2004 John Wiley & Sons, Ltd.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2429-c75165149ef47fc8970db97fcb3afd86e557ca259ca91a4ec37840f0b96a0aec3</citedby><cites>FETCH-LOGICAL-c2429-c75165149ef47fc8970db97fcb3afd86e557ca259ca91a4ec37840f0b96a0aec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpip.539$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpip.539$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15969066$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Siebentritt, Susanne</creatorcontrib><creatorcontrib>Walk, Philipp</creatorcontrib><creatorcontrib>Fiedeler, Ulrich</creatorcontrib><creatorcontrib>Lauermann, Iver</creatorcontrib><creatorcontrib>Rahne, Kari</creatorcontrib><creatorcontrib>Lux-Steiner, Martha Ch</creatorcontrib><creatorcontrib>Niesen, Thomas P.</creatorcontrib><creatorcontrib>Karg, Franz</creatorcontrib><title>MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells</title><title>Progress in photovoltaics</title><addtitle>Prog. Photovolt: Res. Appl</addtitle><description>ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.</description><subject>Applied sciences</subject><subject>buffer</subject><subject>chalcopyrite</subject><subject>damp heat testing</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>MOCVD</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>thin film solar cells</subject><subject>ZnSe</subject><issn>1062-7995</issn><issn>1099-159X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp10FFPwjAUBeDFaCKi8S_0xQiRYbut7e6jmYokKBBUCC9N17VxOtjSQpR_78iMPvl0z02-nIfjeecE9wnGwXWVV30awoHXIhjAJxQWh_vMAp8D0GPvxLl3jAmPgbW86eM4eb1F0iGJMrtDma5Kl2_yco1WevNWZqg0aLmeaZRujdHWIVNalGw7w3VvILudWW-muwFyZSEtUroo3Kl3ZGTh9NnPbXsv93fPyYM_Gg-Gyc3IV0EUgK84JYySCLSJuFExcJylUKc0lCaLmaaUKxlQUBKIjLQKeRxhg1NgEsv6bXuXTa-ypXNWG1HZfCXtThAs9kuIeglRL1HLi0ZW0ilZGCvXKnd_nAIDzFjtrhr3mRd691-dmAwnTavf6Nxt9NevlvZDMB5yKuZPAzGD-XSyDBKxCL8BivZ5cQ</recordid><startdate>200408</startdate><enddate>200408</enddate><creator>Siebentritt, Susanne</creator><creator>Walk, Philipp</creator><creator>Fiedeler, Ulrich</creator><creator>Lauermann, Iver</creator><creator>Rahne, Kari</creator><creator>Lux-Steiner, Martha Ch</creator><creator>Niesen, Thomas P.</creator><creator>Karg, Franz</creator><general>John Wiley & Sons, Ltd</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200408</creationdate><title>MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells</title><author>Siebentritt, Susanne ; Walk, Philipp ; Fiedeler, Ulrich ; Lauermann, Iver ; Rahne, Kari ; Lux-Steiner, Martha Ch ; Niesen, Thomas P. ; Karg, Franz</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2429-c75165149ef47fc8970db97fcb3afd86e557ca259ca91a4ec37840f0b96a0aec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>buffer</topic><topic>chalcopyrite</topic><topic>damp heat testing</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>MOCVD</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>thin film solar cells</topic><topic>ZnSe</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Siebentritt, Susanne</creatorcontrib><creatorcontrib>Walk, Philipp</creatorcontrib><creatorcontrib>Fiedeler, Ulrich</creatorcontrib><creatorcontrib>Lauermann, Iver</creatorcontrib><creatorcontrib>Rahne, Kari</creatorcontrib><creatorcontrib>Lux-Steiner, Martha Ch</creatorcontrib><creatorcontrib>Niesen, Thomas P.</creatorcontrib><creatorcontrib>Karg, Franz</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Siebentritt, Susanne</au><au>Walk, Philipp</au><au>Fiedeler, Ulrich</au><au>Lauermann, Iver</au><au>Rahne, Kari</au><au>Lux-Steiner, Martha Ch</au><au>Niesen, Thomas P.</au><au>Karg, Franz</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells</atitle><jtitle>Progress in photovoltaics</jtitle><addtitle>Prog. Photovolt: Res. Appl</addtitle><date>2004-08</date><risdate>2004</risdate><volume>12</volume><issue>5</issue><spage>333</spage><epage>338</epage><pages>333-338</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><abstract>ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/pip.539</doi><tpages>6</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1062-7995 |
ispartof | Progress in photovoltaics, 2004-08, Vol.12 (5), p.333-338 |
issn | 1062-7995 1099-159X |
language | eng |
recordid | cdi_crossref_primary_10_1002_pip_539 |
source | Wiley Online Library Journals Frontfile Complete |
subjects | Applied sciences buffer chalcopyrite damp heat testing Energy Exact sciences and technology MOCVD Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy thin film solar cells ZnSe |
title | MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T02%3A23%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=MOCVD%20as%20a%20dry%20deposition%20method%20of%20ZnSe%20buffers%20for%20Cu(In,Ga)(S,Se)2%20solar%20cells&rft.jtitle=Progress%20in%20photovoltaics&rft.au=Siebentritt,%20Susanne&rft.date=2004-08&rft.volume=12&rft.issue=5&rft.spage=333&rft.epage=338&rft.pages=333-338&rft.issn=1062-7995&rft.eissn=1099-159X&rft_id=info:doi/10.1002/pip.539&rft_dat=%3Cistex_cross%3Eark_67375_WNG_S9WQPZ2C_X%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |