MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells

ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewh...

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Veröffentlicht in:Progress in photovoltaics 2004-08, Vol.12 (5), p.333-338
Hauptverfasser: Siebentritt, Susanne, Walk, Philipp, Fiedeler, Ulrich, Lauermann, Iver, Rahne, Kari, Lux-Steiner, Martha Ch, Niesen, Thomas P., Karg, Franz
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container_end_page 338
container_issue 5
container_start_page 333
container_title Progress in photovoltaics
container_volume 12
creator Siebentritt, Susanne
Walk, Philipp
Fiedeler, Ulrich
Lauermann, Iver
Rahne, Kari
Lux-Steiner, Martha Ch
Niesen, Thomas P.
Karg, Franz
description ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.
doi_str_mv 10.1002/pip.539
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source Wiley Online Library Journals Frontfile Complete
subjects Applied sciences
buffer
chalcopyrite
damp heat testing
Energy
Exact sciences and technology
MOCVD
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
thin film solar cells
ZnSe
title MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells
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