MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells

MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se)2 solar cells

ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewh...

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Veröffentlicht in:Progress in photovoltaics 2004-08, Vol.12 (5), p.333-338
Hauptverfasser: Siebentritt, Susanne, Walk, Philipp, Fiedeler, Ulrich, Lauermann, Iver, Rahne, Kari, Lux-Steiner, Martha Ch, Niesen, Thomas P., Karg, Franz
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
buffer
chalcopyrite
damp heat testing
Energy
Exact sciences and technology
MOCVD
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
thin film solar cells
ZnSe
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Zusammenfassung:ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se)2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.539