The reduction of reflective notches using "dyed" resist

The reduction of reflective notches using "dyed" resist

Variation in line width caused by light scattered from the substrate (reflective notching) is a major problem in VLSI lithography. This paper demonstrates the reduction of reflective notches using a resist with increased absorptivity (a dyed resist). The optimal set of process conditions which minim...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Polymer engineering and science 1986-09, Vol.26 (16), p.1165-1170
Hauptverfasser: Watts, Michael P. C., Debruin, David, Arnold, William H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Variation in line width caused by light scattered from the substrate (reflective notching) is a major problem in VLSI lithography. This paper demonstrates the reduction of reflective notches using a resist with increased absorptivity (a dyed resist). The optimal set of process conditions which minimize line width variations is explored.
ISSN:0032-3888
1548-2634
DOI:10.1002/pen.760261618