Nonlinear embedding and de-embedding techniques for large-signal fet measurements

The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor's current‐generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current‐generator reference plane that is more strictly linked to the device performance in terms of output power and efficiency. Experiments carried out on a 800‐μm GaN HEMT are reported. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2835–2838, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27169