V-band high-isolation CMOS T/R switch fabricated using 90-nm CMOS technology

This article presents a V‐band high‐isolation complementary metal‐oxide semiconductor (CMOS) single‐pole double‐throw transmitter/receiver (T/R) switch fabricated with TSMC standard 90‐nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved using the body‐floating technique. In addition, the leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64 GHz. At the center frequency of 60 GHz, the port isolation is higher than 34 dB. The switch isolation has also been measured under the large signal test which is not reported in the previous works. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1118–1123, 2012