Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications

In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the charac...

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Veröffentlicht in:Microwave and optical technology letters 2006-07, Vol.48 (7), p.1296-1298
Hauptverfasser: Mai, Linh, Song, Hae-il, Minh Tuan, Le, Van Su, Pham, Yoon, Giwan
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creator Mai, Linh
Song, Hae-il
Minh Tuan, Le
Van Su, Pham
Yoon, Giwan
description In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621
doi_str_mv 10.1002/mop.21621
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subjects Bragg reflector
inductor layout
return loss (S11)
silicon substrate
spiral inductor
title Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications
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