Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications
In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the charac...
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Veröffentlicht in: | Microwave and optical technology letters 2006-07, Vol.48 (7), p.1296-1298 |
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creator | Mai, Linh Song, Hae-il Minh Tuan, Le Van Su, Pham Yoon, Giwan |
description | In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621 |
doi_str_mv | 10.1002/mop.21621 |
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The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). 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Opt. Technol. Lett</addtitle><description>In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621</description><subject>Bragg reflector</subject><subject>inductor layout</subject><subject>return loss (S11)</subject><subject>silicon substrate</subject><subject>spiral inductor</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kE1PwzAMhiMEEmNw4B_kyiFbnLRJe4SJdUODIcbHBSlK03QKdGuVdIL9ezoG3DhYluznsawXoXOgA6CUDVd1M2AgGBygHtA0IUwKeoh6NEljwiIpj9FJCG-UUi4l66HXReO8rrBbFxvT1j7gUufeGd3aAtdrvNpUrSOV3lrfDa68Xi6xt2VldzAuu1o4kuvQLR_GeDrCummqne7qdThFR6Wugj376X30NL5-HE3IbJ5NR5czYpiQQKRJkwh4JKngRhSJLrjWiShKIaSJkjKHHFIouI1zsAaYSSTklhY8jlOaQ8z76GJ_1_g6hO491Xi30n6rgKpdLKqLRX3H0rHDPfvhKrv9H1S38_tfg-wNF1r7-Wdo_66E5DJWL3eZGsNNNMsmqXrmXy8mc2c</recordid><startdate>200607</startdate><enddate>200607</enddate><creator>Mai, Linh</creator><creator>Song, Hae-il</creator><creator>Minh Tuan, Le</creator><creator>Van Su, Pham</creator><creator>Yoon, Giwan</creator><general>Wiley Subscription Services, Inc., A Wiley Company</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200607</creationdate><title>Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications</title><author>Mai, Linh ; Song, Hae-il ; Minh Tuan, Le ; Van Su, Pham ; Yoon, Giwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2671-7c9841347063c6d8ad3aa86df667c48fb1b191d3e5b1ec12c871be0d35590b153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Bragg reflector</topic><topic>inductor layout</topic><topic>return loss (S11)</topic><topic>silicon substrate</topic><topic>spiral inductor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mai, Linh</creatorcontrib><creatorcontrib>Song, Hae-il</creatorcontrib><creatorcontrib>Minh Tuan, Le</creatorcontrib><creatorcontrib>Van Su, Pham</creatorcontrib><creatorcontrib>Yoon, Giwan</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mai, Linh</au><au>Song, Hae-il</au><au>Minh Tuan, Le</au><au>Van Su, Pham</au><au>Yoon, Giwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications</atitle><jtitle>Microwave and optical technology letters</jtitle><addtitle>Microw. Opt. Technol. Lett</addtitle><date>2006-07</date><risdate>2006</risdate><volume>48</volume><issue>7</issue><spage>1296</spage><epage>1298</epage><pages>1296-1298</pages><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). 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subjects | Bragg reflector inductor layout return loss (S11) silicon substrate spiral inductor |
title | Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications |
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