Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications

Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications

In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the charac...

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Veröffentlicht in:Microwave and optical technology letters 2006-07, Vol.48 (7), p.1296-1298
Hauptverfasser: Mai, Linh, Song, Hae-il, Minh Tuan, Le, Van Su, Pham, Yoon, Giwan
Format: Artikel
Sprache:eng
Schlagworte:
Bragg reflector
inductor layout
return loss (S11)
silicon substrate
spiral inductor
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Zusammenfassung:In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.21621