A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology

A 5.2‐GHz monolithic low‐power low‐noise amplifier (LNA) with a quasi‐cascode configuration using InGaP‐GaAs HBT technology is reported for the first time. A state‐of‐the‐art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on‐chip input‐matching network. The input return loss is −32 dB with a voltage gain of 27 dB at 5.2 GHz. An input 1‐dB compression point (P1dB) and an input 3rd‐order intercept point (IIP3) of −14 and −5 dBm are also achieved, respectively. This circuit consumes only small dc power of 6 mW. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 425–427, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20843