Using a low-voltage intermodulation distortion sweet-spot for controlling gain in HEMT amplifiers

In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the convent...

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Veröffentlicht in:Microwave and optical technology letters 2003-10, Vol.39 (1), p.67-70
Hauptverfasser: Malaver, Emigdio, García, José Ángel, Tazón, Antonio, Mediavilla, Angel
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Sprache:eng
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Zusammenfassung:In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the conventional solution under two‐tone and multitone excitations. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 67–70, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11129
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.11129