Using a low-voltage intermodulation distortion sweet-spot for controlling gain in HEMT amplifiers
In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the convent...
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Veröffentlicht in: | Microwave and optical technology letters 2003-10, Vol.39 (1), p.67-70 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the conventional solution under two‐tone and multitone excitations. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 67–70, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11129 |
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ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/mop.11129 |