Switched-mode RF and microwave parallel-circuit Class E power amplifiers

The parallel‐circuit Class E tuned power amplifiers with load networks consisting of either one capacitance and one inductor or a parallel LC circuit and series filter are described and analyzed. The elements of the load networks are defined using the same analytical approach with a set of the exact design equations. The ideal collector voltage and current waveforms for both configurations demonstrate a possible 100% efficiency and do not overlap. RF and microwave applications are demonstrated based on the simulation and experimental results of low‐voltage InGaP/GaAs HBT and high‐voltage LDMOSFET power amplifiers. These switched‐mode parallel‐circuit Class E power amplifiers offer a new challenge for RF and microwave power amplification by providing high‐efficiency operating conditions. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 21–35, 2004.