Solvent Vapor-Induced Nanowire Formation in Poly(3-hexylthiophene) Thin Films

Nanowire lengths and length‐to‐width aspect ratios in regioregular poly(3‐hexylthiophene) (P3HT) were simply controlled through changes in the solvent vapor pressure during solidification. It is demonstrated that the nanowires grew by rod‐to‐rod association, in which the molecular long axis of the P3HT chains appeared to be well‐oriented parallel to the silicon substrate (Si/SiOx). The formation of the nanowires took place by one dimensional self‐assembly, governed by π‐π stacking of the P3HT units. TEM high contrast images showing P3HT nanowires fabricated by spin‐coating under a solvent vapor pressure.