Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs

In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold curren...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Laser physics letters 2005-05, Vol.2 (5), p.239-246
Hauptverfasser: Passaro, V. M. N., Magno, F., De Leonardis, F.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 246
container_issue 5
container_start_page 239
container_title Laser physics letters
container_volume 2
creator Passaro, V. M. N.
Magno, F.
De Leonardis, F.
description In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs‐based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)
doi_str_mv 10.1002/lapl.200410179
format Article
fullrecord <record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_lapl_200410179</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>LAPL200410179</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3279-c80cdd18a16b64253a66efeee0871a4d786289ec6267d31aa219d8d7551a07c03</originalsourceid><addsrcrecordid>eNqFj8tOwzAQRS0EEqWwZZ0fSDtjJ3ayDKUURGiReO6swXEqQ9pUdiQoX0-rooodm5lZzLm6h7FzhAEC8GFDq2bAARIEVPkB66FEHnPgr4f7G_GYnYTwDiAgVXmPydmqcwv3TZ1rl1FbRxee5vPI27qxpmt9iNwyKpoJFWG4HdHz6GFchlN2VFMT7Nnv7rOnq_Hj6DouZ5ObUVHGRnCVxyYDU1WYEco3mfBUkJS2ttZCppCSSmWSZ7k1kktVCSTimFdZpdIUCZQB0WeDXa7xbQibVnrl3YL8WiPorbXeWuu99QbId8Cna-z6n29dFvflXzbesS509mvPkv_QUgmV6pfpRE8v4fZOJFyj-AGwgWjv</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs</title><source>IOP Publishing Journals</source><source>Access via Wiley Online Library</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Passaro, V. M. N. ; Magno, F. ; De Leonardis, F.</creator><creatorcontrib>Passaro, V. M. N. ; Magno, F. ; De Leonardis, F.</creatorcontrib><description>In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs‐based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH &amp; Co. KGaA)</description><identifier>ISSN: 1612-2011</identifier><identifier>EISSN: 1612-202X</identifier><identifier>DOI: 10.1002/lapl.200410179</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>distributed Bragg reflectors ; vertical cavity surface emitting laser</subject><ispartof>Laser physics letters, 2005-05, Vol.2 (5), p.239-246</ispartof><rights>Copyright © 2005 by Astro Ltd., published exclusively by WILEY‐VCH Verlag GmbH &amp; Co. KGaA</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3279-c80cdd18a16b64253a66efeee0871a4d786289ec6267d31aa219d8d7551a07c03</citedby><cites>FETCH-LOGICAL-c3279-c80cdd18a16b64253a66efeee0871a4d786289ec6267d31aa219d8d7551a07c03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Flapl.200410179$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45575</link.rule.ids></links><search><creatorcontrib>Passaro, V. M. N.</creatorcontrib><creatorcontrib>Magno, F.</creatorcontrib><creatorcontrib>De Leonardis, F.</creatorcontrib><title>Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs</title><title>Laser physics letters</title><addtitle>Laser Phys. Lett</addtitle><description>In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs‐based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH &amp; Co. KGaA)</description><subject>distributed Bragg reflectors</subject><subject>vertical cavity surface emitting laser</subject><issn>1612-2011</issn><issn>1612-202X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFj8tOwzAQRS0EEqWwZZ0fSDtjJ3ayDKUURGiReO6swXEqQ9pUdiQoX0-rooodm5lZzLm6h7FzhAEC8GFDq2bAARIEVPkB66FEHnPgr4f7G_GYnYTwDiAgVXmPydmqcwv3TZ1rl1FbRxee5vPI27qxpmt9iNwyKpoJFWG4HdHz6GFchlN2VFMT7Nnv7rOnq_Hj6DouZ5ObUVHGRnCVxyYDU1WYEco3mfBUkJS2ttZCppCSSmWSZ7k1kktVCSTimFdZpdIUCZQB0WeDXa7xbQibVnrl3YL8WiPorbXeWuu99QbId8Cna-z6n29dFvflXzbesS509mvPkv_QUgmV6pfpRE8v4fZOJFyj-AGwgWjv</recordid><startdate>200505</startdate><enddate>200505</enddate><creator>Passaro, V. M. N.</creator><creator>Magno, F.</creator><creator>De Leonardis, F.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200505</creationdate><title>Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs</title><author>Passaro, V. M. N. ; Magno, F. ; De Leonardis, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3279-c80cdd18a16b64253a66efeee0871a4d786289ec6267d31aa219d8d7551a07c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>distributed Bragg reflectors</topic><topic>vertical cavity surface emitting laser</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Passaro, V. M. N.</creatorcontrib><creatorcontrib>Magno, F.</creatorcontrib><creatorcontrib>De Leonardis, F.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Laser physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Passaro, V. M. N.</au><au>Magno, F.</au><au>De Leonardis, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs</atitle><jtitle>Laser physics letters</jtitle><addtitle>Laser Phys. Lett</addtitle><date>2005-05</date><risdate>2005</risdate><volume>2</volume><issue>5</issue><spage>239</spage><epage>246</epage><pages>239-246</pages><issn>1612-2011</issn><eissn>1612-202X</eissn><abstract>In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs‐based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH &amp; Co. KGaA)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/lapl.200410179</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1612-2011
ispartof Laser physics letters, 2005-05, Vol.2 (5), p.239-246
issn 1612-2011
1612-202X
language eng
recordid cdi_crossref_primary_10_1002_lapl_200410179
source IOP Publishing Journals; Access via Wiley Online Library; Institute of Physics (IOP) Journals - HEAL-Link
subjects distributed Bragg reflectors
vertical cavity surface emitting laser
title Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T02%3A34%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optimization%20of%20Bragg%20reflectors%20in%20AlGaAs/GaAs%20VCSELs&rft.jtitle=Laser%20physics%20letters&rft.au=Passaro,%20V.%20M.%20N.&rft.date=2005-05&rft.volume=2&rft.issue=5&rft.spage=239&rft.epage=246&rft.pages=239-246&rft.issn=1612-2011&rft.eissn=1612-202X&rft_id=info:doi/10.1002/lapl.200410179&rft_dat=%3Cwiley_cross%3ELAPL200410179%3C/wiley_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true