Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs

In this paper a detailed investigation of the distributed Bragg reflectors in GaAs‐based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1−xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs‐based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)