Discharge‐flow/chemiluminescence and flash‐photolysis/resonance fluorescence studies of the reaction O + SiH 4 at room temperature

DF‐CL studies using NO 2 chemiluminescence detection of O yielded a rate constant k 1 for O + SiH 4 of (2.6 ± 0.5)×10 −13 cm 3 s −1 at 295 K, where the 95% confidence interval reflects accuracy. FP‐RF studies using flash photolysis of SO 2 followed by time‐resolved vuv fluorescence detection of O at...

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Veröffentlicht in:International journal of chemical kinetics 1993-03, Vol.25 (3), p.183-191
Hauptverfasser: Taylor, Craig A., Ding, Luying, Marshall, Paul
Format: Artikel
Sprache:eng
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Zusammenfassung:DF‐CL studies using NO 2 chemiluminescence detection of O yielded a rate constant k 1 for O + SiH 4 of (2.6 ± 0.5)×10 −13 cm 3 s −1 at 295 K, where the 95% confidence interval reflects accuracy. FP‐RF studies using flash photolysis of SO 2 followed by time‐resolved vuv fluorescence detection of O at 295 K yielded k 1 = (3.0 ± 0.5) ×10 −13 cm 3 s −1 . These results are in good accord with most previous measurements and lead to a combined best estimate of k 1 = (3.2 ± 0.4) × 10 −13 cm 3 s −1 . The DF‐CL and FP‐RF methods appear to have little unrecognized systematic error. © 1993 John Wiley & Sons, Inc.
ISSN:0538-8066
1097-4601
DOI:10.1002/kin.550250306