Discharge‐flow/chemiluminescence and flash‐photolysis/resonance fluorescence studies of the reaction O + SiH 4 at room temperature
DF‐CL studies using NO 2 chemiluminescence detection of O yielded a rate constant k 1 for O + SiH 4 of (2.6 ± 0.5)×10 −13 cm 3 s −1 at 295 K, where the 95% confidence interval reflects accuracy. FP‐RF studies using flash photolysis of SO 2 followed by time‐resolved vuv fluorescence detection of O at...
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Veröffentlicht in: | International journal of chemical kinetics 1993-03, Vol.25 (3), p.183-191 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | DF‐CL studies using NO
2
chemiluminescence detection of O yielded a rate constant
k
1
for O + SiH
4
of (2.6 ± 0.5)×10
−13
cm
3
s
−1
at 295 K, where the 95% confidence interval reflects accuracy. FP‐RF studies using flash photolysis of SO
2
followed by time‐resolved vuv fluorescence detection of O at 295 K yielded
k
1
= (3.0 ± 0.5) ×10
−13
cm
3
s
−1
. These results are in good accord with most previous measurements and lead to a combined best estimate of
k
1
= (3.2 ± 0.4) × 10
−13
cm
3
s
−1
. The DF‐CL and FP‐RF methods appear to have little unrecognized systematic error. © 1993 John Wiley & Sons, Inc. |
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ISSN: | 0538-8066 1097-4601 |
DOI: | 10.1002/kin.550250306 |