Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

A theoretical framework is established for the investigation of the effect of amplified luminescence, non‐radiative recombination, photon losses, and gain non‐linearity on the threshold current characteristics and small‐signal modulation responses of bulk and quantum‐well (QW) 1.3 and 1.55 µm InxGa1−xAsyP1−y/InP laser diodes. It is shown that the rate of recombination induced by amplified luminescence exhibits a highly non‐linear dependence on both carrier concentration and temperature. Amplified luminescence and Auger recombination increase the laser threshold and contribute strongly to the device threshold current temperature sensitivity. Amplified luminescence and Auger recombination are shown to have a significant detrimental effect on the modulation properties of long‐wavelength laser diodes. Copyright © 2001 John Wiley & Sons, Ltd.