Numerical simulation of electrically pumped active vertical‐cavity surface‐emitting lasers diodes based on metal halide perovskite

Metal halide perovskites (MHP)‐based electrically pumped vertical‐cavity surface‐emitting lasers (EPVCSEL) are promising candidates in optoelectronics due to low‐carbon footprint solution processing method. However, significant challenges impede MHP‐EPVCSEL manufacturing: (1) Distributed Bragg Reflectors (DBRs) composed of typical electron transport layers (ETLs) and hole transport layers (HTLs) are not conductive enough. (2) Due to large mobility difference of typical ETLs and HTLs, carriers‐unbalanced injection leads to severe performance degradation. Herein, we propose a potential strategy to address such challenges using MAPbCl 3 and CsSnCl 3 as carrier transport layers with mobility 3 orders larger than typical ETLs and HTLs. Via transfer matrix method calculations, we find that the reflectance of DBRs composed of MAPbCl 3 (130.5 nm)/CsSnCl 3 (108 nm) is larger than 91% with 10 pairs of DBRs. Furthermore, the proposed EPVCSEL device simulation shows that MHP‐EPVCSEL has the potential to achieve room temperature continuous wave lasing with a threshold current density of ∼69 A cm −2 and output optical power ∼10 −4 W. This work can provide a deep insight into the practical realization of MHP‐EPVCSEL.