Wearable Multiparameter Platform Based on AlGaN/GaN High‐electron‐mobility Transistors for Real‐time Monitoring of pH and Potassium Ions in Sweat

Biosensors based on field‐effect transistor (FET) structures have attracted considerable attention because they offer rapid, inexpensive parallel sensing and ultrasensitive label‐free detection. However, long‐term repeatable detection cannot be performed, and Ag/AgCl reference electrode design is co...

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Veröffentlicht in:Electroanalysis (New York, N.Y.) N.Y.), 2020-02, Vol.32 (2), p.422-428
Hauptverfasser: Liu, Xinsheng, Zhao, Lei, Miao, Bin, Gu, Zhiqi, Wang, Jin, Peng, Huoxiang, Li, Jiande, Sun, Wei, Li, Jiadong
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Sprache:eng
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Zusammenfassung:Biosensors based on field‐effect transistor (FET) structures have attracted considerable attention because they offer rapid, inexpensive parallel sensing and ultrasensitive label‐free detection. However, long‐term repeatable detection cannot be performed, and Ag/AgCl reference electrode design is complicated, which has hindered FET biosensors from becoming truly wearable health‐monitoring platforms. In this paper, we propose a novel wearable detection platform based on AlGaN/GaN high‐electron‐mobility transistors (HEMTs). In this platform, a sweatband was used to continuously collect sweat, and a pH detecting unit and a potassium ion detecting unit were formed by modifying different sensitive films to realize the long‐term stable and repeatable detection of pH and potassium ions. Experimental data show that the wearable detection platform based on AlGaN/GaN HEMTs has good sensitivity (pH 3–7 sensitivity is 45.72 μA/pH; pH 7.4–9 sensitivity is 51.073 μA/pH; and K+ sensitivity is 4.94 μA/lgαK+), stability (28 days) and repeatability (the relative standard deviation (RSD) of pH 3–7 sensitivity is 2.6 %, the RSD of pH 7.4–9 sensitivity is 2.1 %, and the RSD of K+ sensitivity is 7.3 %). Our newly proposed wearable platform has excellent potential for predictive analytics and personalized medical treatment.
ISSN:1040-0397
1521-4109
DOI:10.1002/elan.201900405