Vapor Pressures of Precursors for the Chemical Vapor Deposition of Silicon-Based Films

Vapor Pressures of Precursors for the Chemical Vapor Deposition of Silicon-Based Films

Thermal stability and vapor pressure measurement for a number of SiO2 precursors are studied. For the first time results from1,2‐bis(trimethyl)siloxyethane (TMSE), (3‐glycidoxypropyl) trimethylethoxysilane (Glymol) and 1H,1H, 2H, 2H‐perfluorooctyltriethoxysilane (PTES) are reported. Results from tet...

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Veröffentlicht in:Chemical vapor deposition 2004-01, Vol.10 (1), p.20-22
Hauptverfasser: Alcott, G.R., van de Sanden, R.M.C.M., Kondic, S., Linden, J.L.
Format: Artikel
Sprache:eng
Schlagworte:
Coatings
Precursors
Silicon
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Zusammenfassung:Thermal stability and vapor pressure measurement for a number of SiO2 precursors are studied. For the first time results from1,2‐bis(trimethyl)siloxyethane (TMSE), (3‐glycidoxypropyl) trimethylethoxysilane (Glymol) and 1H,1H, 2H, 2H‐perfluorooctyltriethoxysilane (PTES) are reported. Results from tetraethoxysilane (TEOS), tripropylsilane (TPS) are found to agree with previously published values. Measurements are made in the temperatures range of 20 to 200 °C and values are fitted using the integrated Clausius–Claperon equation. Enthalpies of vaporization are calculated.
ISSN:0948-1907
1521-3862
DOI:10.1002/cvde.200306145