Growth of Copper Films by Metal Organic Vapor Deposition Using (Pyrazolylborate)copper(I) Compounds

CuCl reacts with Na[HB(R3R5pz)3] and phosphine (PR3) or isonitrile (CNR) to yield volatile (pyrazolylborate)copper(I) complexes. These compounds were evaluated as MOCVD precursors. Using [{HB(pz)3}Cu(PEt3)] and [{HB(pz)3}Cu(PMe3)], thin copper films were grown by thermal metal organic chemical vapor deposition in a low pressure reactor in the temperature range 150–350°C. Polycrystalline Cu‐phases were obtained at temperatures as low as 150°C. The metallic films were characterized by four‐point‐probe resistivity measurements, AES, and XPS, as well as AFM and SEM. Selective deposition on metal‐seeded surface sites was observed on Pt, Au, Al, and W versus SiO2. Anti‐selective deposition was found to occur on Pd‐seeded samples. Full Paper: Copper is a good alternative to aluminum for silicon metallization. The MOCVD of copper has been mostly carried out using oxygen containing ligands, but there is the danger that this element may be incorporated into the layer. In this paper copper(I) pyrazolylborate compounds are evaluated for their use in Cu MOCVD. These precursors give three‐dimensional growth of Cu (see Figure) and would be particularly useful for doping oxygen‐sensitive materials with copper.