Preparation and thermolysis of a single-source precursor to gallium arsenide phosphide

Stoichiometrically controlled, reproducible ternary 13–15 semi‐conductor materials such as GaAsP can now be produced from a single source precursor. Although these materials can be formulated using conventional multi‐precursor CVD techniques, control over the stoichiometry, and thus the behavior of the semiconductors, is difficult. The synthesis and performance of the new single‐source precursor are presented.