A novel empirical study of the two-dimensional non-linear drain-current behaviour in sub-micrometre MOS transistors

This paper presents a simple, quasi‐static, non‐linear (saturated mode) NMOS drain‐current model for Volterra‐series analysis. The model is based on a linear transconductance, a linear drain‐source conductance and a purely non‐linear drain‐source current generator. The drain‐current dependency on both drain‐source and gate‐source voltages is included. Model parameters are then extracted from direct numerical differentiation of DC I/V measurements performed on a 160 × 0.25 µm NMOS device. This paper presents the Volterra analysis of this model, including algebraic expressions for intercept points and output spectrum. The model has been verified by comparing measured two‐tone iIP2 and iIP3 with the corresponding model predictions over a wide range of bias points. The correspondence between the modelled and measured response is good. Copyright © 2005 John Wiley & Sons, Ltd.