ChemInform Abstract: Thin Films of Ge-Sb-Te-Based Phase Change Materials: Microstructure and in situ Transformation

Thin films of GeSb2Te4 and Ge2Sb2Te4 are deposited on inert substrates by dc magnetron sputtering from stoichiometric compound targets and characterized by powder XRD and HRTEM.

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Bibliographische Detailangaben
Veröffentlicht in:	ChemInform 2011-11, Vol.42 (45), p.no-no
Hauptverfasser:	Tomforde, Jan, Bensch, Wolfgang, Kienle, Lorenz, Duppel, Viola, Merkelbach, Philipp, Wuttig, Matthias
Format:	Artikel
Sprache:	eng
Schlagworte:	antimony antimony, Sb equilibria germanium germanium, Ge lasers semiconductors superconductors technology of materials technology of materials, lasers, semiconductors, superconductors tellurium tellurium, Te
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Thin films of GeSb2Te4 and Ge2Sb2Te4 are deposited on inert substrates by dc magnetron sputtering from stoichiometric compound targets and characterized by powder XRD and HRTEM.
ISSN:	0931-7597 1522-2667
DOI:	10.1002/chin.201145008