Synthesis and photoluminescence characteristics of Sm 3 + -doped Bi 4 Si 3 O 12 red-emitting phosphor

A series of novel red-emitting Sm -doped bismuth silicate phosphors, Bi Si O :xSm (0.01 ≤ x ≤ 0.06), were prepared via the sol-gel route. The phase of the synthesized samples calcinated at 800 °C is isostructural with Bi Si O according to X-ray diffraction results. Under excitation with 405 nm light, some typical peaks of Sm ions centered at 566, 609, 655 and 715 nm are found in the emission spectra of the Sm -doped Bi Si O phosphors. The strongest peak located at 609 nm is due to G - H transition of Sm . The luminescence intensity reaches its maximum value when the Sm ion content is 4 mol%. The results suggest that Bi Si O :Sm may be a potential red phosphor for white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.