RF sputter deposition of poly(tetrafluoroethylene) films as masking materials for silicon micromachining

Polymers have been studied extensively because of their wonderful array of properties. Their properties can be tailored by many means and can be made useful in many ways. Polymers can be crosslinked or branched and can provide different properties, such as conduction and passivation. This study dealt with the RF sputter deposition of poly(tetrafluoroethylene) (PTFE) films with the aim of using them as masking materials during the fabrication of various micromachined structures. The films were deposited on silicon substrates at different plasma powers (100, 150, and 200 W) for a constant deposition time (60 min). To test the masking properties, the deposited films were immersed in a 20 wt % aqueous KOH solution at 80°C for 60 min. The films showed lower contact angles and interfacial tension, and this indicated good adhesion of the films to the silicon substrates. Good adhesion is an essential quality of masking materials during micromachining. The structural properties of the as‐deposited and etched films were studied with Fourier transform infrared and X‐ray photoelectron spectroscopy. These indicated that the bonding groups and binding energies of CF and CCF matched the reported values well. Furthermore, the presence of CF and CCF bonds, even after the etching of silicon substrates in highly alkaline KOH solutions for 60 min, showed that the PTFE films remained unchanged in the etchant and, therefore, could function as good masking materials during the fabrication of micromachined structures. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 91: 1183–1192, 2004