Metastable phase formation and structural change characteristics of vapor deposited semiconductor films

Metastable phase formation and structural change characteristics of vapor deposited semiconductor films

Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb2Te4 thin films prepared by RF‐magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast...

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Veröffentlicht in:Annalen der Physik 1992, Vol.504 (6), p.391-398
Hauptverfasser: Fuxi, Gan, Songsheng, Xue, Zhengxiu, Fan
Format: Artikel
Sprache:eng
Schlagworte:
GeSb2Te4
Laser-induced phase change
Metastable phase
Thermal-induced phase change
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Zusammenfassung:Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb2Te4 thin films prepared by RF‐magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.
ISSN:0003-3804
1521-3889
DOI:10.1002/andp.19925040602