Formation of High‐Performance Multi‐Cation Halide Perovskites Photovoltaics by δ‐CsPbI 3 /δ‐RbPbI 3 Seed‐Assisted Heterogeneous Nucleation
The performance of perovskite solar cells is highly dependent on the fabrication method; thus, controlling the growth mechanism of perovskite crystals is a promising way towards increasing their efficiency and stability. Herein, a multi‐cation halide composition of perovskite solar cells is engineer...
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Veröffentlicht in: | Advanced energy materials 2021-04, Vol.11 (16) |
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Hauptverfasser: | , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The performance of perovskite solar cells is highly dependent on the fabrication method; thus, controlling the growth mechanism of perovskite crystals is a promising way towards increasing their efficiency and stability. Herein, a multi‐cation halide composition of perovskite solar cells is engineered via the two‐step sequential deposition method. Strikingly, it is found that adding mixtures of 1D polymorphs of orthorhombic δ‐RbPbI
3
and δ‐CsPbI
3
to the PbI
2
precursor solution induces the formation of porous mesostructured hexagonal films. This porosity greatly facilitates the heterogeneous nucleation and the penetration of FA (formamidinium)/MA (methylammonium) cations within the PbI
2
film. Thus, the subsequent conversion of PbI
2
into the desired multication cubic α‐structure by exposing it to a solution of formamidinium methylammonium halides is greatly enhanced. During the conversion step, the δ‐CsPbI
3
also is fully integrated into the 3D mixed cation perovskite lattice, which exhibits high crystallinity and superior optoelectronic properties. The champion device shows a power conversion efficiency (PCE) over 22%. Furthermore, these devices exhibit enhanced operational stability, with the best device retaining more than 90% of its initial value of PCE under 1 Sun illumination with maximum power point tracking for 400 h. |
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ISSN: | 1614-6832 1614-6840 |
DOI: | 10.1002/aenm.202003785 |