Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology (Adv. Electron. Mater. 1/2023)

Vertical Interconnects In article number 2200838, Heiko O. Jacobs and co‐workers demonstrate how gas ions and metal particles leave a spark discharge generator in a plasma jet to deposit on a chip in a self‐aligning manner. The charge gas ions float the insulating resist on top of an oxide/metallization stack to guide the metal nanoparticles with a surrounding air gap into the interconnect openings to form a contact between the semiconductor and the first metallization level.