Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022)

Diamond Junction Field Effect Transistor Ultrawide bandgap semiconductors offer a new playground for researchers thanks to their huge energy scale. In article 2100542, Julien Pernot and co‐workers create a diamond junction field effect transistor from a non‐volatile photo‐switch by taking advantage of the deep ionisation energy of the nitrogen donor in the n‐type region. The state of the transistor can only be switched under illumination. In the dark, the transistor stores the state before switching off.