Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures

2D materials exhibit unique electrical and mechanical properties, and therefore have been investigated extensively. One of their important applications is logic‐in‐memory, which can perform logic operations as well as store data. This makes it possible to overcome the intrinsic obstacles of the von Neuman computing architecture that uses separate processing and storage units. Herein, a two‐terminal self‐gating random‐access memory (SGRAM) based on partially aligned graphene/MoS2/h‐BN/graphene/h‐BN/Au heterostructures is proposed. One of the two electrodes acts as the drain as well as the gate electrodes; thus, the SGRAM exhibits both diode‐like behaviors and nonvolatile memory effects, allowing the construction of a simple crossbar array without a selector. The SGRAM crossbar array consisting of 2 × 2 cells is constructed and its random accessibility is verified by addressing each cell independently. In addition, reconfigurable AND/OR logic gates are implemented using the SGRAM array. Hence, it is demonstrated that SGRAMs are promising candidates for “Beyond von Neumann” computing architectures. Two‐terminal self‐gating random‐access memory (SGRAM) based on graphene/MoS2/h‐BN/graphene/h‐BN/Au heterostructures, in which one of the two electrodes acts as the drain as well as the gate electrodes, are presented. The SGRAM exhibits both diode‐like behaviors and nonvolatile memory effects, resulting in 2 × 2 crossbar array without a selector and reconfigurable AND/OR logic gates.