Van Der Waals Heterostructures Based on Atomically‐Thin Superconductors

Van der Waals heterostructures (vdWHs) allow the assembly of high‐crystalline 2D materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In this work, the feasibility of integrating 2D materials in‐between 2D supercon...

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Veröffentlicht in:Advanced electronic materials 2021-07, Vol.7 (7), p.n/a
Hauptverfasser: Boix‐Constant, Carla, Mañas‐Valero, Samuel, Córdoba, Rosa, Coronado, Eugenio
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Sprache:eng
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Zusammenfassung:Van der Waals heterostructures (vdWHs) allow the assembly of high‐crystalline 2D materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In this work, the feasibility of integrating 2D materials in‐between 2D superconductors is illustrated. In particular, the fabrication and electrical characterization of vertical vdWHs based on air‐unstable atomically‐thin transition metal dichalcogenides formed by NbSe2/TaS2/NbSe2 stacks, with TaS2 being the insulator 1T‐TaS2 or the metal 2H‐TaS2, is presented. Phase transitions as 1T‐TaS2 charge density wave and NbSe2 superconductivity are detected. An enhancement of the vdWH resistance due to Andreev reflections is observed below the superconducting transition temperature of the NbSe2 flakes. Moreover, in the NbSe2 superconducting state, the field and temperature dependence of the normalized conductance is analyzed within the Dynes’ model and the overall behavior is consistent with the Bardeen–Cooper–Schrieffer theory. This vdWH approach can be extended to other 2D materials, such as 2D magnets or topological insulators, with the aim of exploring the new emergent properties that may arise from such combinations. Vertical van der Waals heterostructures based on atomically‐thin superconductors are fabricated and their electronic properties inspected. Different phase transitions, superconductivity, and Andreev reflections are analyzed in the NbSe2/TaS2/NbSe2 stacks, with TaS2 being the insulator 1T‐TaS2 or the metal 2H‐TaS2. This approach aims to explore the new emergent properties that can arise from combining different 2D materials.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202000987