An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating

In‐memory computing is currently a hot research field and shows potential to overcome the Von Neumann bottleneck in conventional computers. Most proposed designs demand use of electrical current, which will generate substantial heat and power consumption when miniaturized. Here, multibit memory and Boolean logic operation are shown at the same location in a manganite nanowire through electric field exploitation. Local electrical fields are employed to control eight‐level resistive states with high accuracy along with Boolean logic operations. Such architecture only requires current density of 4 × 101 A cm−2 for resistance measurements, which is four orders of magnitude smaller than state‐of‐the‐art designs. In addition, the device shows a resistive switching time within 8 ns, which is suitable for high‐speed electronics technology. This study highlights a route towards in‐memory computing with low heat dissipation and power consumption. The prototype nanowire device described in this work demonstrates a new approach to integrate multibit memory and logic operation in a single device unit. A manganite nanowire undergoes insulator‐to‐metal transitions via local electric fields. Using this effect, 3‐bit memory and Boolean logic NOT, NOR, and NAND are implemented. This device has high speed and low power consumption.