Various Threshold Switching Devices for Integrate and Fire Neuron Applications

This study demonstrates an integrate and fire (I&F) neuron using threshold switching (TS) devices to implement spike‐based neuromorphic system. An I&F neuron can be realized using the hysteric voltage switch characteristics of a TS device. To investigate the effects of various TS devices on neuron behavior, neurons are compared using three different types of TS device: NbO2‐based insulator‐to‐metal transition (IMT) device, B–Te‐based ovonic threshold switching device, and Ag/HfO2‐based atomic‐switching TS device. The results show that the off‐state resistance and switching time of the TS devices determine the leaky/nonleaky characteristics and types of activation function of neuron, respectively. In addition, it is confirmed that the threshold voltage and on‐state resistance of the TS device determine the total power consumption of neuron. Furthermore, the feasibility of the TS devices in a spiking neural network is verified by simulation program with integrated circuit emphasis (SPICE) simulation. This work indicates applicability of TS‐based I&F neuron in neuromorphic hardware application. The relationship between the characteristics of threshold switching (TS) devices based integrate and fire neurons and the switching parameters of the TS devices are investigated by comparison of three different types of neurons using a NbO2‐based insulator‐to‐metal transition device, a B–Te‐based ovonic threshold switching device, and a Ag/HfO2‐based atomic‐switching TS device.