High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric

High‐performance bottom‐gate nonvolatile organic field‐effect transistor (OFET) devices based on a special matching energy‐band alignment between the organic semiconductor pentacene and the charge‐trapping dielectric ZnTe are reported. The lower potential difference between the conduction band minim...

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Veröffentlicht in:	Advanced electronic materials 2019-05, Vol.5 (5), p.n/a
Hauptverfasser:	Wang, Yiru, Yang, Youbin, Ding, Ping, Wei, Qi, Gao, Xu, Wang, Suidong, Liu, Chang, Li, Aidong, Yin, Jiang, Xia, Yidong, Liu, Zhiguo
Format:	Artikel
Sprache:	eng
Schlagworte:	charge‐trapping energy‐band alignment nonvolatile memory organic field‐effect transistor pentacene
Online-Zugang:	Volltext
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