High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

Transparent p‐type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p‐type transparent oxide semiconductors. Mildly heat‐treated CuI layers have mobilities of ≈20 cm2 V−1 s−1, which are comparable to those of p‐type GaN epilayers. Highly transparent p–n diodes with sufficient rectification ratio (106) can be manufactured by employing a heterojunction of p‐type CuI and amorphous n‐type In‐Ga‐Zn‐O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p‐type semiconductor for flexible transparent electronics. Transparent p‐type CuI layers with high hole mobility are fabricated on plastic sheets. The mildly heat‐treated CuI layers have hole mobilities of 20 cm2 V−1 s−1, which are comparable to those of p‐type GaN epilayers. Transparent p–n diodes with sufficient rectification ratio are manufactured by employing a heterojunction consisting of CuI and n‐type amorphous In‐Ga‐Zn‐O layers on plastic sheets.