Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1

Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1

This work reports on solution processed Nd2O3 thin films that are deposited under ambient conditions at moderate temperatures of about 400 °C and their implementation as gate dielectrics in thin film transistors employing solution processed ZnO semiconducting channels is also demonstrated. The optic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced electronic materials 2017-04, Vol.3 (4), p.n/a
Hauptverfasser: Esro, Mazran, Kolosov, Oleg, Stolojan, Vlad, Jones, Peter J., Milne, William I., Adamopoulos, George
Format: Artikel
Sprache:eng
Schlagworte:
gate dielectrics
neodymium oxide
solution‐processed electronics
spray pyrolysis
thin‐film transistors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This work reports on solution processed Nd2O3 thin films that are deposited under ambient conditions at moderate temperatures of about 400 °C and their implementation as gate dielectrics in thin film transistors employing solution processed ZnO semiconducting channels is also demonstrated. The optical, dielectric, electric, structural, surface, and interface properties of Nd2O3 films are investigated using a wide range of characterization techniques that reveal smooth Nd2O3 films of cubic structure, wide bandgap (6 eV), high‐k (11), and low leakage currents (
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201700025