Painting Integrated Complementary Logic Circuits for Single‐Crystal Organic Transistors: A Demonstration of a Digital Wireless Communication Sensing Tag

Recent progress in the development of organic semiconductor materials has improved the performance of both p‐ and n‐type transistors. Currently, it is anticipated that the next step in the evolution of electronics will be to establish a reliable fabrication technique for integrated electronic devices such as plastic sensor films and radio‐frequency identification (RFID) tags. Herein, a new fabrication process to grow line‐shaped organic single‐crystalline films with widths on the order of one mm is reported. To realize large‐scale complementary logic circuits, it is necessary to precisely control the growth conditions of p‐type and n‐type semiconductors when painting on different areas on the same substrate. This method makes it possible to fabricate highly oriented organic thin films elongated over a few millimeters for both p‐ and n‐type semiconductors next to one another. The p‐type and n‐type semiconductor crystals grown by this technique exhibit excellent average mobilities of 4.9 cm2 V–1 s–1 and 0.16 cm2 V–1 s–1 respectively. A prototypical RFID tag based on single crystals fabricated with the presented technique is also demonstrated. This tag was able to transfer 4‐bit digital signals including the information from a temperature sensor through near‐field wireless communication at the commercially usable frequency of 13.56 MHz. A method of growing line‐shaped single crystals with excellent performance is developed to fabricate complementary metal‐oxide‐semiconductor logic circuits. This technique is demonstrated by making a radio‐frequency identification tag based on single crystals fabricated via this technique. This device is able to transmit 4‐bit digital signals including the information from a temperature sensor through near‐field wireless communication.