High‐Performance Near‐Infrared Phototransistor Based on n‐Type Small‐Molecular Organic Semiconductor

High‐Performance Near‐Infrared Phototransistor Based on n‐Type Small‐Molecular Organic Semiconductor

A solution‐processed near‐infrared (NIR) organic phototransistor (OPT) based on n‐type organic small molecular material BODIPY‐BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY‐BF2 based OPT device as a very prom...

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Veröffentlicht in:Advanced electronic materials 2017-01, Vol.3 (1), p.n/a
Hauptverfasser: Li, Feng, Chen, Yin, Ma, Chun, Buttner, Ulrich, Leo, Karl, Wu, Tom
Format: Artikel
Sprache:eng
Schlagworte:
field‐effect transistors
NIR absorption
optoelectronics
organic phototransistors
organic semiconductors
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Zusammenfassung:A solution‐processed near‐infrared (NIR) organic phototransistor (OPT) based on n‐type organic small molecular material BODIPY‐BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY‐BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201600430