Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower

Ultrathin SnSe nanosheets (9–20 nm) are synthesized on molten polydimethylsiloxane by chemical vapor deposition. Thickness‐dependent Raman features persist even with thickness over 10 nm. Meanwhile, anisotropy of field‐effect mobility along b and c axes is observed above 240 K. Finally, thermopower...

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Veröffentlicht in:	Advanced electronic materials 2016-11, Vol.2 (11), p.n/a
Hauptverfasser:	Pei, Tengfei, Bao, Lihong, Ma, Ruisong, Song, Shiru, Ge, Binghui, Wu, Liangmei, Zhou, Zhang, Wang, Guocai, Yang, Haifang, Li, Junjie, Gu, Changzhi, Shen, Chengmin, Du, Shixuan, Gao, Hong-Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	electrical anisotopy field effect thermopower thickness-dependent Raman ultrathin SnSe
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Ultrathin SnSe nanosheets (9–20 nm) are synthesized on molten polydimethylsiloxane by chemical vapor deposition. Thickness‐dependent Raman features persist even with thickness over 10 nm. Meanwhile, anisotropy of field‐effect mobility along b and c axes is observed above 240 K. Finally, thermopower can be easily modified by gate bias and temperature.
ISSN:	2199-160X 2199-160X
DOI:	10.1002/aelm.201600292