Solution-Processed All-Oxide Transparent High-Performance Transistors Fabricated by Spray-Combustion Synthesis

Spray‐combustion processed all‐oxide thin film transistors (TFTs) integrating a high‐quality ZrO2 or Al2O3 gate dielectric, a high‐mobility indium zinc oxide or indium gallium zinc oxide semiconductor, and indium tin oxide electrodes are reported. High‐quality porosity‐free, well‐defined layers with uniform thickness across the transparent TFT stacks ensure good gate modulation, low operating voltages, high carrier mobilities, good on/off current ratio, and excellent reliability.