Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as ser...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced electronic materials 2016-06, Vol.2 (6), p.n/a
Hauptverfasser: Shin, Yong Seon, Kang, Won Tae, Kim, Young Rae, Won, Ui Yeon, Lee, Ki Young, Heo, Jin Seong, Park, Seong Jun, Lee, Young Hee, Yu, Woo Jong
Format: Artikel
Sprache:eng
Schlagworte:
graphene random mesh
heterostructure transistors
indium zinc oxide
transparent transistors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page n/a
container_issue 6
container_start_page
container_title Advanced electronic materials
container_volume 2
creator Shin, Yong Seon
Kang, Won Tae
Kim, Young Rae
Won, Ui Yeon
Lee, Ki Young
Heo, Jin Seong
Park, Seong Jun
Lee, Young Hee
Yu, Woo Jong
description Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.
doi_str_mv 10.1002/aelm.201500382
format Article
fullrecord <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_aelm_201500382</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_DF8DCW3F_0</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3272-836d32afffc993ce78c972ce352ab9895fd497c2dcd3989128de6802477a63643</originalsourceid><addsrcrecordid>eNqFkE1rwkAQhkNpoWK99rx_ILofSTZ7lKhRMLWIxdLLsm4mJG0-ZDfW5t9XsYi3nmZeeJ9heBznmeAhwZiOFJTVkGLiY8xCeuf0KBHCJQF-v7_ZH52BtZ8YY8ID5vms52RJsyvKou3QtM5VraGCukVNhjZG1XavzDkuPlaj2KwTNIcWTGNbc9DtwQD6LhSKjdrnUIO7VnXaVG4CNkeRMqYAg15Vmx9VZ5-ch0yVFgZ_s--8zaabaO4uV_EiGi9dzSinbsiClFGVZZkWgmngoRacamA-VTsRCj9LPcE1TXXKTpHQMIUgxNTjXAUs8FjfGV7u6tOb1kAm96aolOkkwfIsSp5FyauoEyAuwLEoofunLcfTZXLLuhe2sC38XFllvmTAGffl9iWWk1k4ibZsJjH7BQ6CfKk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways</title><source>Wiley Online Library All Journals</source><creator>Shin, Yong Seon ; Kang, Won Tae ; Kim, Young Rae ; Won, Ui Yeon ; Lee, Ki Young ; Heo, Jin Seong ; Park, Seong Jun ; Lee, Young Hee ; Yu, Woo Jong</creator><creatorcontrib>Shin, Yong Seon ; Kang, Won Tae ; Kim, Young Rae ; Won, Ui Yeon ; Lee, Ki Young ; Heo, Jin Seong ; Park, Seong Jun ; Lee, Young Hee ; Yu, Woo Jong</creatorcontrib><description>Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.</description><identifier>ISSN: 2199-160X</identifier><identifier>EISSN: 2199-160X</identifier><identifier>DOI: 10.1002/aelm.201500382</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>graphene random mesh ; heterostructure transistors ; indium zinc oxide ; transparent transistors</subject><ispartof>Advanced electronic materials, 2016-06, Vol.2 (6), p.n/a</ispartof><rights>2016 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3272-836d32afffc993ce78c972ce352ab9895fd497c2dcd3989128de6802477a63643</citedby><cites>FETCH-LOGICAL-c3272-836d32afffc993ce78c972ce352ab9895fd497c2dcd3989128de6802477a63643</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Faelm.201500382$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Faelm.201500382$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Shin, Yong Seon</creatorcontrib><creatorcontrib>Kang, Won Tae</creatorcontrib><creatorcontrib>Kim, Young Rae</creatorcontrib><creatorcontrib>Won, Ui Yeon</creatorcontrib><creatorcontrib>Lee, Ki Young</creatorcontrib><creatorcontrib>Heo, Jin Seong</creatorcontrib><creatorcontrib>Park, Seong Jun</creatorcontrib><creatorcontrib>Lee, Young Hee</creatorcontrib><creatorcontrib>Yu, Woo Jong</creatorcontrib><title>Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways</title><title>Advanced electronic materials</title><addtitle>Adv. Electron. Mater</addtitle><description>Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.</description><subject>graphene random mesh</subject><subject>heterostructure transistors</subject><subject>indium zinc oxide</subject><subject>transparent transistors</subject><issn>2199-160X</issn><issn>2199-160X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkE1rwkAQhkNpoWK99rx_ILofSTZ7lKhRMLWIxdLLsm4mJG0-ZDfW5t9XsYi3nmZeeJ9heBznmeAhwZiOFJTVkGLiY8xCeuf0KBHCJQF-v7_ZH52BtZ8YY8ID5vms52RJsyvKou3QtM5VraGCukVNhjZG1XavzDkuPlaj2KwTNIcWTGNbc9DtwQD6LhSKjdrnUIO7VnXaVG4CNkeRMqYAg15Vmx9VZ5-ch0yVFgZ_s--8zaabaO4uV_EiGi9dzSinbsiClFGVZZkWgmngoRacamA-VTsRCj9LPcE1TXXKTpHQMIUgxNTjXAUs8FjfGV7u6tOb1kAm96aolOkkwfIsSp5FyauoEyAuwLEoofunLcfTZXLLuhe2sC38XFllvmTAGffl9iWWk1k4ibZsJjH7BQ6CfKk</recordid><startdate>201606</startdate><enddate>201606</enddate><creator>Shin, Yong Seon</creator><creator>Kang, Won Tae</creator><creator>Kim, Young Rae</creator><creator>Won, Ui Yeon</creator><creator>Lee, Ki Young</creator><creator>Heo, Jin Seong</creator><creator>Park, Seong Jun</creator><creator>Lee, Young Hee</creator><creator>Yu, Woo Jong</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201606</creationdate><title>Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways</title><author>Shin, Yong Seon ; Kang, Won Tae ; Kim, Young Rae ; Won, Ui Yeon ; Lee, Ki Young ; Heo, Jin Seong ; Park, Seong Jun ; Lee, Young Hee ; Yu, Woo Jong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3272-836d32afffc993ce78c972ce352ab9895fd497c2dcd3989128de6802477a63643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>graphene random mesh</topic><topic>heterostructure transistors</topic><topic>indium zinc oxide</topic><topic>transparent transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shin, Yong Seon</creatorcontrib><creatorcontrib>Kang, Won Tae</creatorcontrib><creatorcontrib>Kim, Young Rae</creatorcontrib><creatorcontrib>Won, Ui Yeon</creatorcontrib><creatorcontrib>Lee, Ki Young</creatorcontrib><creatorcontrib>Heo, Jin Seong</creatorcontrib><creatorcontrib>Park, Seong Jun</creatorcontrib><creatorcontrib>Lee, Young Hee</creatorcontrib><creatorcontrib>Yu, Woo Jong</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Advanced electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shin, Yong Seon</au><au>Kang, Won Tae</au><au>Kim, Young Rae</au><au>Won, Ui Yeon</au><au>Lee, Ki Young</au><au>Heo, Jin Seong</au><au>Park, Seong Jun</au><au>Lee, Young Hee</au><au>Yu, Woo Jong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways</atitle><jtitle>Advanced electronic materials</jtitle><addtitle>Adv. Electron. Mater</addtitle><date>2016-06</date><risdate>2016</risdate><volume>2</volume><issue>6</issue><epage>n/a</epage><issn>2199-160X</issn><eissn>2199-160X</eissn><abstract>Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/aelm.201500382</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 2199-160X
ispartof Advanced electronic materials, 2016-06, Vol.2 (6), p.n/a
issn 2199-160X
2199-160X
language eng
recordid cdi_crossref_primary_10_1002_aelm_201500382
source Wiley Online Library All Journals
subjects graphene random mesh
heterostructure transistors
indium zinc oxide
transparent transistors
title Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T03%3A40%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mobility%20Enhancement%20of%20Transparent%20IZO/GrRM%20Heterostructure%20via%20Graphene-Random-Mesh%20Carrier%20Pathways&rft.jtitle=Advanced%20electronic%20materials&rft.au=Shin,%20Yong%20Seon&rft.date=2016-06&rft.volume=2&rft.issue=6&rft.epage=n/a&rft.issn=2199-160X&rft.eissn=2199-160X&rft_id=info:doi/10.1002/aelm.201500382&rft_dat=%3Cistex_cross%3Eark_67375_WNG_DF8DCW3F_0%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true